Semiconductor device and method for fabricating the same
US12207475B2 · kind B2 · utility
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Key dates
| Filing date | Jun 14, 2023 |
| Grant date | Jan 21, 2025 |
| Priority date | — |
| Expiry date | Jun 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a top electrode on the MTJ, forming an inter-metal dielectric (IMD) layer around the top electrode and the MTJ, forming a landing layer on the IMD layer and the MTJ, and then patterning the landing layer to form a landing pad. Preferably, the landing pad is disposed on the top electrode and the IMD layer adjacent to one side of the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.