Vapor deposition precursor compounds and process of use

US12209105B2 · kind B2 · utility

Assignee

• ENTEGRIS, INC. · US

Inventors

• Philip S. H. Chen · Bethel, US
• Eric Condo · Shelton, US
• Bryan C. Hendrix · Danbury, US
• Thomas H. Baum · New Fairfield, US
• David Kuiper · Brookfield, US

Key dates

• Filing date: Sep 1, 2022
• Grant date: Jan 28, 2025
• Expiry date: Dec 10, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.