Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling
US12211535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2022 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | May 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.