Spatial pattern loading measurement with imaging metrology
US12211717B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Sep 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.