Through-substrate via and method for manufacturing a through-substrate via

US12211769B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Georg Parteder · Gleisdorf, AT
• Jochen Kraft · Bruck an der Mur, AT
• Stefan Jessenig · Graz, AT

Key dates

• Filing date: Aug 27, 2020
• Grant date: Jan 28, 2025
• Expiry date: Oct 15, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76898
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.