Patent · US Active

Trench structure for reduced wafer cracking

US12211805B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 17, 2021
Grant dateJan 28, 2025
Priority date
Expiry dateApr 14, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3512
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a first wafer comprising a first portion of a seal ring structure within a body of the first wafer. The semiconductor device includes a second wafer comprising a second portion of the seal ring structure within a body of the second wafer. The second wafer is affixed to the first wafer such that the second portion of the seal ring structure is on the first portion of the seal ring structure. The semiconductor device includes a trench structure comprising a first trench in the first wafer and a second trench in the second wafer, where the first trench and the second trench are on a same side of the seal ring structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.