Method for forming a thin film resistor with improved thermal stability
US12211888B2 · kind B2 · utility
0Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2021 |
| Grant date | Jan 28, 2025 |
| Priority date | — |
| Expiry date | Aug 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/075
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.