Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US12215416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2023 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Nov 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.