Eric Christopher Stevens
8Patents
1h-index
14Co-inventors
37Inventor score
Filing activity: Aug 13, 2020 → Nov 8, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11286558B2 | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film | Electricity | 5 | Active |
| US12241158B2 | Method for forming structures including transition metal layers | Chemistry; Metallurgy | 0 | Active |
| US11674220B2 | Method for depositing molybdenum layers using an underlayer | Chemistry; Metallurgy | 0 | Active |
| US12351903B2 | Method and system for depositing molybdenum layers | Chemistry; Metallurgy | 0 | Active |
| US12354877B2 | Vapor deposition of films comprising molybdenum | Electricity | 0 | Active |
| US11898242B2 | Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film | Electricity | 0 | Active |
| US12215416B2 | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film | Electricity | 0 | Active |
| US11827978B2 | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.