Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant
US12217965B2 · kind B2 · utility
0Cited by
28References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2022 |
| Grant date | Feb 4, 2025 |
| Priority date | — |
| Expiry date | Mar 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a metal includes providing a structure a process chamber, and providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure. The metal may comprise a word line or another conductor of a three-dimensional memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.