Method for determining a manufacturing parameter of a resistive random access memory cell
US12224007B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Nov 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for determining a value of a manufacturing parameter of a resistive memory cell, the resistive memory cell including a stack of layers, includes providing reference memory cells corresponding to technological alternatives of the stack of layers; measuring for each reference memory cell an initial resistance value; determining for each reference memory cell a programming parameter value selected from among the resistance in a high resistance state and the programming window; establishing a relationship between the programming parameter and the initial resistance from the initial resistance values and the programming parameter values; and determining the manufacturing parameter value for which the programming parameter is greater than or equal to a target value, from the relationship between the programming parameter and the initial resistance and from a dependency relationship between the initial resistance and the manufacturing parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.