Method of forming an image sensor having stress releasing structure
US12224297B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2023 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | Jan 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a semiconductor structure includes forming a pixel array region on a substrate. The method further includes forming a first seal ring region on the substrate, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The method further includes forming a first isolation feature in the first seal ring region, wherein forming the first isolation feature includes filling a first opening with a dielectric material, wherein the first isolation feature is a continuous structure surrounding the pixel array region. The method further includes forming a second isolation feature between the first isolation feature and the pixel array region, wherein forming the second isolation feature includes filling a second opening with the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.