Patent · US Active

Capacitors with built-in electric fields

US12224309B2 · kind B2 · utility

0Cited by

1References

17Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Sou-Chi Chang · Portland, US
Chia-Ching Lin · Daxi District, TW
Kaan Oguz · Beaverton, US
I-Cheng Tung · Hillsboro, US
Uygar E. Avci · Portland, US
Matthew V. Metz · Portland, US
Ashish Verma Penumatcha · Hillsboro, US
Ian A. Young · Portland, US
Arnab Sen Gupta · Beaverton, US

Key dates

Filing date	Dec 9, 2020
Grant date	Feb 11, 2025
Priority date	—
Expiry date	Jun 11, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/682
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed herein are capacitors including built-in electric fields, as well as related devices and assemblies. In some embodiments, a capacitor may include a top electrode region, a bottom electrode region, and a dielectric region between and in contact with the top electrode region and the bottom electrode region, wherein the dielectric region includes a perovskite material, and the top electrode region has a different material structure than the bottom electrode region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.