Radio frequency transistor amplifiers having self-aligned double implanted source/drain regions for improved on-resistance performance and related methods
US12224318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2022 |
| Grant date | Feb 11, 2025 |
| Priority date | — |
| Expiry date | May 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A HEMT transistor has a semiconductor layer structure that comprises a Group III nitride-based channel layer and a higher bandgap Group III nitride-based barrier layer on the channel layer. A gate finger and first and second source/drain contacts are provided on the semiconductor layer structure. A first source/drain region is provided in the semiconductor layer structure that includes a first implanted region that is underneath the first source/drain contact and a first auxiliary implanted region. A depth of the first implanted region is at least twice a depth of the first auxiliary implanted a region. The first source/drain region extends inwardly a first distance from a lower edge of an inner sidewall of the first source/drain contact, and extends outwardly a second smaller distance from a lower edge of an outer sidewall of the first source/drain contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.