Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US12227840B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Jan 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6875
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.