High power module package structures
US12230601B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Feb 18, 2025 |
| Priority date | — |
| Expiry date | Mar 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/8334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes disposing a first direct bonded metal (DBM) substrate substantially parallel to a second DBM substrate a distance apart to enclose a space. The method further includes disposing at least a semiconductor die in the space, and bonding the semiconductor die to the first DBM substrate using a first adhesive layer without an intervening spacer block between the semiconductor die and the first DBM substrate, and bonding the semiconductor die to the second DBM substrate using a second adhesive without an intervening spacer block between the semiconductor die and the second DBM substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.