Lateral gate material arrangements for quantum dot devices

US12230687B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Roza Kotlyar · Portland, US
• Stephanie A. Bojarski · Beaverton, US
• Hubert C. George · Portland, US
• Payam Amin · Portland, US
• Patrick H. Keys · Portland, US
• Ravi Pillarisetty · Portland, US
• Roman Caudillo · Portland, US
• Florian Luethi · Portland, US
• James S. Clarke · Portland, US

Key dates

• Filing date: Dec 10, 2020
• Grant date: Feb 18, 2025
• Expiry date: May 28, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Disclosed herein are lateral gate material arrangements for quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; and a gate above the quantum well stack, wherein the gate includes a gate electrode, the gate electrode includes a first material proximate to side faces of the gate and a second material proximate to a center of the gate, and the first material has a different material composition than the second material.