CMP composition including anionic and cationic inhibitors
US12234382B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2021 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Aug 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition for polishing tungsten or molybdenum comprises, consists essentially of, or consists of a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an amino acid selected from the group consisting of arginine, histidine, cysteine, lysine, and mixtures thereof, an anionic polymer or an anionic surfactant, and an optional amino acid surfactant. A method for chemical mechanical polishing a substrate including a tungsten layer or a molybdenum layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten layer or the molybdenum layer from the substrate and thereby polish the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.