Semiconductor deposition reactor and components for reduced quartz devitrification
US12234554B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jul 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68785
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.