Apparatus and method for processing substrate using plasma
US12237151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Dec 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.