Deposition method
US12237167B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jan 20, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Jan 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
With respect to a method of depositing a silicon nitride film on a surface of a substrate, the method includes depositing the silicon nitride film on the surface of the substrate by intermittently supplying trisilylamine into a processing chamber accommodating the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.