Etch process for oxide of alkaline earth metal
US12237172B2 · kind B2 · utility
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5References
18Claims
0Family size
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Key dates
| Filing date | May 17, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Feb 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate that includes: loading the substrate in a plasma processing chamber, the substrate having a surface including an oxide, the oxide including an alkaline earth metal; flowing a process gas including CCl4 into the plasma processing chamber; in the plasma processing chamber, forming a fluorine-free plasma from the process gas by applying a source power to a source electrode of the plasma processing chamber; and exposing the substrate to the fluorine-free plasma to etch the oxide of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.