Polymerization protective liner for reactive ion etch in patterning
US12237175B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jun 3, 2020 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Aug 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of patterning vias and trenches using a polymerization protective liner after forming a lower patterned mask layer used for etching trenches on a semiconductor substrate prior to forming an upper patterned mask layer used for etching vias are provided. Methods involve forming a polymerization protective liner either nonconformally or conformally using silicon tetrachloride and methane polymerization. Polymerization protective liners may be sacrificial.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.