Method of manufacturing memory device having active area in elongated block
US12237209B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 5, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | May 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate having an active area disposed over or in the semiconductor substrate, and a first isolation member extending into the semiconductor substrate and disposed adjacent to the active area; disposing an energy-decomposable mask over the semiconductor substrate and the first isolation member; irradiating a portion of the energy-decomposable mask with an electromagnetic radiation; removing the portion of the energy-decomposable mask irradiated with the electromagnetic radiation to form a patterned energy-decomposable mask; removing a portion of the semiconductor substrate exposed through the patterned energy-decomposable mask to form a trench; removing the patterned energy-decomposable mask; and forming a second isolation member within the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.