High electron mobility transistor and method for forming the same
US12237395B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Feb 20, 2022 |
| Grant date | Feb 25, 2025 |
| Priority date | — |
| Expiry date | Mar 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor (HEMT) includes a substrate, a channel layer, a barrier layer and a passivation layer. A contact structure is disposed on the passivation layer and extends through the passivation layer and the barrier layer to directly contact the channel layer. The contact structure includes a metal layer, and the metal layer includes a metal material doped with a first additive. A weight percentage of the first additive in the metal layer is between 0% and 2%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.