Conformal oxidation for gate all around nanosheet I/O device
US12243941B2 · kind B2 · utility
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3References
13Claims
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Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Aug 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.