3D AND flash memory device and method of fabricating the same
US12245428B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2022 |
| Grant date | Mar 4, 2025 |
| Priority date | — |
| Expiry date | Jun 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/015
Abstract
A three-dimensional AND flash memory device includes a gate stack structure, a charge storage structure, a first conductive pillar and a second conductive pillar, an insulating pillar, and a channel pillar. The gate stack structure includes gate layers and insulating layers stacked alternately with each other. The first and second conductive pillars extend through the gate stack structure. The channel pillar extends through the gate stack structure. The charge storage structure is disposed between the gate stack structure and the channel pillar. The channel pillar includes: a first part and a second part connected each other. The first part is located between the charge storage structure and the insulating pillar. The second part includes a first region electrically connected to the first conductive pillar, and a second region electrically connected to the second conductive pillar. A curvature of the first part is smaller than a curvature of the second part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.