Etching method and etching apparatus
US12249515B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 10, 2021 |
| Grant date | Mar 11, 2025 |
| Priority date | — |
| Expiry date | Jun 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.