Process for obtaining a nitride layer
US12252807B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 24, 2018 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Feb 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for obtaining a nitride (N) layer preferably obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), may include: on a stack including a substrate and at least the following layers successively disposed from the substrate: a creep layer having a glass transition temperature, Tglass transition, and a crystalline layer, forming pads by etching the stack so that each pad includes at least a creep segment formed by at least a portion of the creep layer, and a crystalline segment formed by the crystalline layer; and growing by epitaxy a crystallite on each of the pads and continuing the epitaxial growth of the crystallites so as to form the nitride layer. The epitaxial growth may be carried out at a temperature Tepitaxy, such that Tepitaxy≥k1×Tglass transition, with k1 being 0.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.