Atomic layer etching method using ligand exchange reaction
US12255075B2 · kind B2 · utility
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Key dates
| Filing date | Jan 17, 2023 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | Jun 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.