Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes
US12255225B2 · kind B2 · utility
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Key dates
| Filing date | Sep 25, 2020 |
| Grant date | Mar 18, 2025 |
| Priority date | — |
| Expiry date | May 6, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
Low leakage thin film capacitors for decoupling, power delivery, integrated circuits, related systems, and methods of fabrication are disclosed. Such thin film capacitors include a titanium dioxide dielectric and one or more noble metal oxide electrodes. Such thin film capacitors are suitable for high voltage applications and provide low current density leakage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.