Resonant antenna for physical vapor deposition applications
US12261017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2022 |
| Grant date | Mar 25, 2025 |
| Priority date | — |
| Expiry date | Apr 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q5/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods provide a solution for efficiently generating high density plasma for a physical vapor deposition (PVD). The present solution includes a vacuum chamber for a PVD process. The system can include a target located within the vacuum chamber for sputtering a material onto a wafer. The system can include a resonant structure formed by an antenna and a plurality of capacitors. The resonant structure can be configured to provide a pulsed output at a resonant frequency. The resonant structure can be configured to generate, via the antenna and based on the pulsed output, a plasma between the target and a location of the wafer to ionize the material sputtered from the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.