Fin on silicon-on-insulator

US12261215B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Hong Yu · Rexford, US
• Haiting Wang · Clifton Park, US
• Zhenyu Hu · Leonberg, DE

Key dates

• Filing date: Jan 27, 2022
• Grant date: Mar 25, 2025
• Expiry date: May 6, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158

Abstract

A structure is provided, the structure may include an active layer arranged over a buried oxide layer, the active layer having a top surface. The top surface of the active layer may have a first portion and a second portion. A barrier stack may be arranged over the first portion of the top surface of the active layer. The barrier stack may include a barrier layer. The second portion of the top surface of the active layer may be adjacent to the barrier stack. A fin may be spaced from the first portion of the top surface of the active layer by the barrier stack, the fin having a first side surface, a second side surface opposite to the first side surface and a top surface. A dielectric layer may be arranged on the first side surface, the second side surface and the top surface of the fin, and the second portion of the top surface of the active layer. A metal layer may be arranged over the dielectric layer.