Silicon precursor compounds and method for forming silicon-containing films
US12264392B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jun 23, 2021 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Jun 23, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.