Patent · US Active

Sacrificial capping layer for contact etch

US12266533B2 · kind B2 · utility

0Cited by

6References

20Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Yun Han · Albany, US
Andrew Metz · Albany, US
Peter Biolsi · New Windsor, US

Key dates

Filing date	Apr 15, 2022
Grant date	Apr 1, 2025
Priority date	—
Expiry date	Apr 15, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method which includes providing a substrate having a source/drain region and an etch stop layer on the source/drain region. A plasma etching process is performed using an etching gas that removes the etch stop layer and forms a sacrificial oxide capping layer on the source/drain region. The sacrificial oxide capping layer is then from the source/drain region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.