Selective barrier metal etching
US12266537B2 · kind B2 · utility
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2References
15Claims
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Inventors
Key dates
| Filing date | Feb 3, 2022 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Aug 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective barrier metal etching includes performing a hydrogen implantation process, in an inductively coupled plasma (ICP) etch chamber, to chemically reduce an oxidized portion of a barrier metal layer formed within a feature in a metal layer on the barrier metal layer, and performing an etch process, in the ICP etch chamber, to remove the hydrogen implanted portion of the barrier metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.