Method for manufacturing semiconductor device using etchant composition having high etching selectivity
US12266538B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 17, 2022 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Jul 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.