Device for improving the mobility of carriers in a MOSFET channel on silicon carbide
US12266692B2 · kind B2 · utility
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4References
17Claims
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Key dates
| Filing date | Sep 6, 2019 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Apr 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/031
Abstract
A MOSFET device arranged on a substrate 10 having first and second heavily-doped strips 11 and 14 respectively covered by first and second contacts 13 and 15, these two strips being spaced apart by a channel 18 that also appears on the substrate 10, the channel being covered by a dielectric layer 20, itself surmounted by a third contact 21. The channel 18 incorporates a thin film 19 lightly doped with dopant atoms of a same type as the channel, at the interface with the dielectric layer 20, the dopant atoms being distributed on both sides of the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.