Semiconductor devices and methods of manufacturing thereof
US12266715B2 · kind B2 · utility
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20Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 10, 2023 |
| Grant date | Apr 1, 2025 |
| Priority date | — |
| Expiry date | Aug 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.