Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
US12269969B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2020 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Aug 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive comprising ceria particles, (b) a cationic polymer selected from a cationic homopolymer, a cationic copolymer comprising at least one cationic monomer and at least one nonionic monomer, and a combination thereof, (c) a quaternary ammonium salt or a quaternary phosphonium salt, and (d) water, wherein the polishing composition has a pH of about 5 to about 8. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride and/or polysilicon by contacting the substrate with the inventive chemical-mechanical polishing composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.