Method for producing a substrate for the epitaxial growth of a layer of a galium-based III-N alloy
US12270123B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 4, 2021 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Mar 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a substrate for the epitaxial growth of a gallium-based III-N alloy layer comprises the following successive steps: —providing a donor substrate of single-crystal silicon carbide; —implanting ions in the donor substrate to form an embrittlement zone defining a thin film layer of single-crystal SiC; —bonding the donor substrate onto a first receiving substrate via a bonding layer; —detaching the donor substrate along the embrittlement zone to transfer the thin film of SiC onto the first receiving substrate; —epitaxially growing a layer of semi-insulating SiC having a thickness greater than 1 μm on the thin film of SiC; —bonding the layer of semi-insulating SiC onto a second receiving substrate having a high electrical resistivity; —removing at least a portion of the bonding layer to detach the first receiving substrate; and —removing the transferred thin film of single-crystal SiC, to expose the semi-insulating SiC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.