Method of processing a cleaved semiconductor wafer
US12270768B2 · kind B2 · utility
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2References
17Claims
0Family size
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Key dates
| Filing date | Sep 13, 2021 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Mar 15, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of detecting defects on a semiconductor wafer includes directing diffuse light to the semiconductor wafer and reflecting the diffuse light off of the semiconductor wafer. The method further includes detecting the diffuse light with a camera to generate an image of the semiconductor wafer and analyzing the image to detect defects on the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.