Etching method and etching apparatus
US12272541B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | May 25, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Mar 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68714
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes preparing a substrate in which titanium nitride and molybdenum or tungsten are present, and etching the titanium nitride by supplying a processing gas including a ClF3 gas and a N2 gas to the substrate, wherein in the etching the titanium nitride, a partial pressure ratio of the ClF3 gas to the N2 gas in the processing gas is set to a value at which grain boundaries of the molybdenum or the tungsten are nitrided to such an extent that generation of a pitting is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.