Three-dimensional memory devices and fabricating methods thereof

US12272645B2 · kind B2 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Lei Liu · Granger, US
• Yuancheng Yang · Hubei, CN
• Wenxi Zhou · 红钢城街道, CN
• Kun Zhang · Hubei, CN
• Di Wang · Timonium, US
• Tao Yang · Zhejiang, CN
• Dongxue Zhao · Hubei, CN
• Zhiliang Xia · 红钢城街道, CN
• Zongliang Huo · 红钢城街道, CN

Key dates

• Filing date: May 6, 2022
• Grant date: Apr 8, 2025
• Expiry date: Jun 10, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/09
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of three-dimensional memory devices and fabricating methods thereof are disclosed. One disclosed method for forming a memory structure comprises: forming a bottom conductive layer on a substrate; forming a dielectric stack on the bottom conductive layer, the dielectric stack comprising a plurality of alternatively arranged first dielectric layers and second dielectric layers; forming an opening penetrating the dielectric stack and exposing the bottom conductive layer; forming a cap layer on a bottom of the opening; forming a cylindrical body and a top contact on the cap layer and in the opening; and replacing the plurality of second dielectric layers with conductive layers.