Method and system for fabricating fiducials using selective area growth
US12272654B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2024 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Mar 12, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54426
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming alignment marks includes providing a III-V compound substrate having a device region and an alignment mark region, forming a hardmask layer having a first set of openings on the alignment mark region exposing a first surface portion of the III-V compound substrate and a second set of openings on the device region exposing a second surface portion of the III-V compound substrate, etching the exposed surface of the III-V compound substrate using the hardmask layer as a mask to form a plurality of trenches, and epitaxially regrowing a semiconductor layer in the trenches to form the alignment marks extending to a predetermined height over the processing surface of the III-V compound substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.