Semiconductor device
US12273101B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 10, 2023 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Mar 11, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0081
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.