Field effect transistor and fabrication method thereof
US12274087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2022 |
| Grant date | Apr 8, 2025 |
| Priority date | — |
| Expiry date | Nov 22, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.