Novolak/DNQ based, chemically amplified photoresist
US12276909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2019 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Sep 2, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The acetal moiety is elected from a mono functional alkyl acetal moiety protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, an acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety; a di-functional acetal comprising moiety, linking and protecting two repeat units comprising Novolak phenolic hydroxy moieties, forming a linking point in said polymer component between two different polymer chains in said polymer component, and a mixture of any of these three types of acid cleavable acetal moieties. The PAC component is selected from said acetal, comprising a moiety functionalized with a PAC moiety, protecting a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.