Semiconductor storage devices and data storage systems including the same
US12278165B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2022 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | May 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first structure and a second structure thereon. The first structure includes a substrate, circuit elements on the substrate, a lower interconnection structure electrically connected to the circuit elements, and lower bonding pads, which are electrically connected to the lower interconnection structure. The second structure includes a stack structure including: gate electrodes and interlayer insulating layers, which are alternately stacked and spaced apart in a vertical direction; a plate layer that extends on the stack structure; channel structures within the stack structure, separation regions, which penetrate at least partially through the stack structure, and upper bonding pads, which are electrically connected to the gate electrodes and the channel structures, and are bonded to corresponding ones of the lower bonding pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.