Manufacturing method of semiconductor device
US12278211B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Oct 23, 2023 |
| Grant date | Apr 15, 2025 |
| Priority date | — |
| Expiry date | Oct 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1436
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.